Ideal Vacuum Circular Magnetron Sputtering Targets, TANTALUM OXIDE- Ta₂O₅ Sputtering Target, 3'' Diameter x 0.125" Thick, 99.995 Percent Purity, Metallic Bonded to a OFHC Copper Backing Plate

This product is a circular magnetron TANTALUM OXIDE- Ta₂O₅ sputtering target, with a 3'' diameter x 0.125" thickness. It is 99.995% pure, and is metallically bonded to a OFHC (Oxygen-Free High Conductivity) copper backing plate.

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TANTALUM OXIDE- Ta₂ O₅
Tantalum Pentoxide
Tantalum pentoxide (Ta₂O₅) is an inorganic compound consisting of tantalum and oxygen. It is a white, crystalline powder known for its high refractive index, excellent chemical stability, and dielectric properties. Ta₂O₅ is used extensively in optical and electronic applications due to its unique combination of properties.

Tantalum pentoxide (Ta₂O₅) is widely used in thin film coatings due to its exceptional optical, electronic, and dielectric properties. Its versatility and ability to form stable, high-quality films make it ideal for a variety of high-performance applications:

1. High-Refractive Index Coatings: Ta₂O₅ is used in multi-layer optical coatings for lenses, mirrors, and filters. Its high refractive index helps to create precise anti-reflective and high-reflective coatings.
2. Anti-Reflective Coatings: Utilized in combination with lower-refractive-index materials to produce anti-reflective coatings for enhancing light transmission in lenses and displays.
3. Barrier Layers: Used as a protective layer against oxidation and corrosion in multilayer structures.
4. Electro-Optic and Photonic Devices:.

Tantalum pentoxide’s unique combination of high refractive index, (~2.1 to 2.2 at 550 nm), dielectric strength, and chemical stability makes it an indispensable material in thin film coatings for optics, electronics, and photonics, enabling the development of high-performance devices and systems.

Deposition Methods:
Ta2O5 thin films can be deposited using RF sputtering, reactive sputtering (with tantalum and oxygen gas), and electron-beam evaporation. It is also deposited using atomic layer deposition (ALD) for precise, conformal coatings in microelectronics.

Notes:
Metallic or elastomer backing plate bonding is recommended for all dielectric target materials because these materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity. These targets are most susceptible to thermal shock due to their low thermal conductivity and hence, may require specific power ramp up and ramp down procedures during start up and shut down steps.