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Ideal Vacuum Circular Magnetron Sputtering Targets, TITANIUM NITRIDE- TiN Sputtering Target, 3'' Diameter x 0.125" Thick, 99.5 Percent Purity, Metallic Bonded to a OFHC Copper Backing Plate

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Ideal Vacuum Circular Magnetron Sputtering Targets, TITANIUM NITRIDE- TiN Sputtering Target, 3'' Diameter x 0.125" Thick, 99.5 Percent Purity, Metallic Bonded to a OFHC Copper Backing Plate

Condition:

New

Part Number:

P1013711

Warranty:

Full Manufacturer's Warranty

Out of Stock

Sale: $2,058.00

Expecting 1
Anticipated Arrival 1 on 2024-12-21

Currency: US Dollar (USD)

Description

Ideal Vacuum Circular Magnetron Sputtering Targets, TITANIUM NITRIDE- TiN Sputtering Target, 3'' Diameter x 0.125" Thick, 99.5 Percent Purity, Metallic Bonded to a OFHC Copper Backing Plate.
Ideal Vacuum Products, LLC.

This product is a circular magnetron TITANIUM NITRIDE- TiN sputtering target, with a 3'' diameter x 0.125" thickness. It is 99.5% pure, and is metallically bonded to a OFHC (Oxygen-Free High Conductivity) copper backing plate.

We use a very competitive pricing strategy to ensure you receive the highest quality products at the best possible value, giving you both affordability and excellence in every purchase. We offer huge discounts to every customer, customers who place bulk orders will enjoy huge savings. We stock huge quantities of our products to give our customers guaranteed same day shipping after placing an order. This short lead time is loved by all our customers who look to manage their cash flow with quicker turnaround times. Our regular customers can maintain lower inventory levels, decreasing storage costs and minimizing the risk of obsolescence. Buying from Ideal Vacuum means a customer receives their product more quickly, enhancing satisfaction and meeting their urgent needs. This also enables our customers to stay ahead of their competition by quickly adapting to new trends and demands.

TITANIUM NITRIDE- TiN
Titanium Nitride (TiN) is a popular material for thin films due to its unique combination of mechanical, electrical, and optical properties. Here's a summary of its key features and uses in thin films:

Refractive Index: TiN has a relatively high refractive index (~2.4 to 3.0 in the visible range), making it useful for optical applications where high reflectance or specific interference effects are needed.

Mechanical Properties: TiN is extremely hard and wear-resistant, with a hardness approaching that of diamond. It is commonly used as a protective coating for cutting tools, machining components, and wear-resistant surfaces.

Chemical and Thermal Stability: TiN is chemically inert, corrosion-resistant, and stable at high temperatures, making it suitable for harsh environments and high-temperature applications.

Electrical Conductivity: TiN is electrically conductive, which is rare for a ceramic material. This makes it useful in microelectronics as a diffusion barrier and conductive coating for components such as electrodes.

Deposition Methods: TiN can be deposited using several techniques, including DC or RF sputtering, reactive sputtering (with a titanium target and nitrogen gas), and physical vapor deposition (PVD).

Color and Appearance: TiN has a distinctive golden-yellow appearance, which is why it is also used for decorative coatings on jewelry and luxury items.

Applications: Common in optical coatings, microelectronics, cutting tool coatings, protective layers, diffusion barriers, and decorative finishes.

In summary, titanium nitride is highly valued in thin-film applications for its hardness, corrosion resistance, and electrical conductivity, making it a versatile choice in industries ranging from tooling to electronics and optics..

RF vs DC Sputtering:
RF sputtering is often the preferred method for sputtering pure metallic oxides because they are insulators and RF has an alternating electric field that prevents charge buildup on the target surface. This alternating field reduces the charge accumulation that would otherwise cause arcing in DC sputtering.

Deposition rate:
Lower deposition rate: In RF sputtering, the power transfer to the plasma is less efficient compared to DC, primarily due to the alternating nature of the electric field. This results in a lower deposition rate compared to DC sputtering under equivalent power conditions.

Target Material:
For conductive targets (like titanium in reactive sputtering), DC sputtering has a higher deposition rate. For insulating targets like pure metal oxides, RF sputtering must be used, and deposition rates are typically lower.

Power Levels:
Increasing the power can increase deposition rates in both RF and DC sputtering, but deposition rates still tend to be higher in DC for conductive materials.

Pressure and Gas Flow:
Higher deposition rates can be achieved by optimizing the gas pressure and flow, with different optimal conditions for RF vs. DC.

Notes:
Metallic or elastomer backing plate bonding is recommended for all dielectric target materials because these materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity. These targets are most susceptible to thermal shock due to their low thermal conductivity and hence, may require specific power ramp up and ramp down procedures during start up and shut down steps.